Dynamic Energy Losses in Switch Power Amplifiers as Part of a Hydroacoustic Transmission Path
https://doi.org/10.31854/1813-324X-2022-8-3-14-26
Abstract
Results of studies of dynamic energy losses in broadband switch amplifiers of the BD and ABD classes when operating on a hydroacoustic emitter are presented. Relative energy losses in amplifying stages based on silicon (Si) and silicon carbide (SiC) field-effect transistors are compared along with dynamic processes associated with "transistor-diode" through current in switching amplification circuits with Si pulsed reverse diodes and SiC Schottky diodes. The viability of using modern SiC transistors with their own reverse Schottky diodes is demonstrated. Highfrequency components of the low-pass filter current must be taken into account in order to assess the energy performance of the transmitting equipment. Recommendations on the choice of operating modes for the final stages of the switch amplification modules of hydroacoustic radiating paths are offered.
About the Authors
V. AlexandrovRussian Federation
Vladimir Alexandrov
St. Petersburg, 197376
O. Vorobyov
Russian Federation
Oleg Vorobyov
St. Petersburg, 193232
Yu. Kazakov
Russian Federation
Yuri Kazakov
St. Petersburg, 197376
St. Petersburg, 197022
L. Markova
Russian Federation
Lyubov Markova
St. Petersburg, 197376
St. Petersburg, 193232
References
1. Koryakin Yu.A., Smirnov S.A., Yakovlev G.V. Ship Sonar Technology. State and Current Problems. St. Petersburg: Nauka Publ.; 2004. 410 p. (in Russ.)
2. Smaryshev M.D., Dobrovolsky Yu.Yu. Hydroacoustic Antennas. Leningrad: Sudostroenie Publ.; 1984. 300 p. (in Russ.)
3. Artym A.D. Class D Amplifiers and Switch Generators in Radiocommunications and Broadcasting. Moscow: Communication Publ.; 1980. 209 p. (in Russ.)
4. Kibakin V.M. The Basics of Switch Amplification Techniques. Moscow: Energiya Publ.; 1980. 232 p. (in Russ.)
5. Kibakin V.M. Fundamentals of the Theory and Calculation of Transistor Low-Frequency Power Amplifiers. Moscow: Radio i sviaz Publ.; 1988. 239 p. (in Russ.)
6. Aleksanyan A.A., Balyan R.Kh., Sivers M.A. High-Frequency High-Power Transistor Devices. Leningrad: Energoatomizdat Publ.; 1989. 174 p. (in Russ.)
7. Vintrich A., Nicolai U., Tursky V., Reiman T., Kolpakov A. IGBT and MOSFET: Basic Concepts and Development Paths Part 2. MOSFET. Silovaia elektronika. 2014;2(47):34‒40. (in Russ.) URL: https://power-e.ru/components/igbt-mosfet-2/ [Accessed 10th May 2022]
8. Aleksandrov V.A., Markova L.V., Smirnov V.A., Kazakov Yu.V. Analysis of the results of the development of energyefficient broadband hydroacoustic transmitters for underwater sound communication. Hydroacoustics. 2017;32(4):56‒64. (in Russ.)
9. Manual TND6237/D. SiC MOSFETs: Gate Drive Optimization ON Semiconductor. Rev.2, May – 2022. URL: https://www.onsemi.com/pub/Collateral/TND6237-D.PDF [Accessed 10th May 2022]
10. Aleksandrov V.A., Kalashnikov S.A., Magarova Yu.A. The ABD Class Amplifier of Underwater Sound Communication Signals. Proceedings of the X All-Russian Conference on Applied Technologies of Hydroacoustics and Hydrophysics, GA-2010, 25‒27 May 2010, St. Petersburg, Russia). St. Petersburg: Nauka Publ.; 2010. p.163‒165. (in Russ.)
11. Aleksandrov V.A., Maiorov V.A., Polkanov K.I. Two-Channel Class D Amplifier. Patent RF, no. 2188498 С1, 08.27.2002. (in Russ.)
12. Kazakov Yu.V. Results of Development of Integrated High-Voltage Switch-Mode Power. Proceedings of the X All-Russian Conference on Applied Technologies of Hydroacoustics and Hydrophysics, GA-2020, 21‒25 September 2020). St. Petersburg: POLITEH-PRESS Publ.; 2020. p.495‒498. (in Russ.)
13. Bhalla A., Rentuk V. Are you for SiC or Silicon? Development Trends and Problems of Using SiC in Applications. Part 1. Silovaia elektronika. 2020;1(82):8‒11. (in Russ.) URL: https://power-e.ru/components/sic_ili_kremnij-chast_1 [Accessed 10th May 2022)
Review
For citations:
Alexandrov V., Vorobyov O., Kazakov Yu., Markova L. Dynamic Energy Losses in Switch Power Amplifiers as Part of a Hydroacoustic Transmission Path. Proceedings of Telecommunication Universities. 2022;8(3):14-26. (In Russ.) https://doi.org/10.31854/1813-324X-2022-8-3-14-26