Results of studies of dynamic energy losses in broadband switch amplifiers of the BD and ABD classes when operating on a hydroacoustic emitter are presented. Relative energy losses in amplifying stages based on silicon (Si) and silicon carbide (SiC) field-effect transistors are compared along with dynamic processes associated with "transistor-diode" through current in switching amplification circuits with Si pulsed reverse diodes and SiC Schottky diodes. The viability of using modern SiC transistors with their own reverse Schottky diodes is demonstrated. Highfrequency components of the low-pass filter current must be taken into account in order to assess the energy performance of the transmitting equipment. Recommendations on the choice of operating modes for the final stages of the switch amplification modules of hydroacoustic radiating paths are offered.